Chapter 2
Background
2.1 Related work on process variation
2.1.1 Early work
Manufacturing variations have been a main source of random properties of pre-
cisely designed ICs. Even though process variations were very small in 20th
century fabrication technology, they could affect precise analog design and they
were addressed by a number of researchers [27,41,55,66]. Three of the early
works in identification of random variations stand out.
In 1982, Shyu et al. [66] studied effects of random variations on MOS capac-
itors. They identified the capacitor edge and the oxide thickness fluctuation as
two sources of randomness in MOS capacitors. The variations in the physical
properties lead to a random capacitance. They analytically derived the relation-
More intriguing information
1. RETAIL SALES: DO THEY MEAN REDUCED EXPENDITURES? GERMAN GROCERY EVIDENCE2. DEVELOPING COLLABORATION IN RURAL POLICY: LESSONS FROM A STATE RURAL DEVELOPMENT COUNCIL
3. Federal Tax-Transfer Policy and Intergovernmental Pre-Commitment
4. Spatial Aggregation and Weather Risk Management
5. The Values and Character Dispositions of 14-16 Year Olds in the Hodge Hill Constituency
6. The geography of collaborative knowledge production: entropy techniques and results for the European Union
7. Optimal Private and Public Harvesting under Spatial and Temporal Interdependence
8. Evaluating the Success of the School Commodity Food Program
9. The name is absent
10. The name is absent